SATI®(半空氣帶絕緣)是我們到現時為止技術上最先進的單一導體絕緣方法。經過繞上一層冷凍、有孔、無極性電介質的帶子(PTFE, Teflon®特氟龍),可以避免導體因熱而引致的壓力,也消除了銅在繞製時再結晶的現象,因此而使導電能力和均勻結構都處於領先地位。和熱繞方式不同,SATI® 能保持PTFE帶有孔,半空氣的結構,這樣就可以使電介質的相對電容率和能量損耗大為降低。此外,用了SATI®,相對電容率能平均分佈於整個絕緣,愈近導體的相對電容率便愈低,反之則愈高。最後,冷凍繞製方式並不影響PTFE帶的黏性,而這黏性有助導體的機械性緩衡。SATI®只應用在我們最高級的Reference及Ultimate系列。

SATI
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